| PART |
Description |
Maker |
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY29F400BT45 HY29F400TR90 HY29F400TT HY29F400TG55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| MX29F400TM 29F4000 MX29F400TMC-90 MX29F400TTC-70 M |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| MBM29LV400BC-70PFTN MBM29LV400BC-90PFTN MBM29LV400 |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
IC,EEPROM,FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
|
SPANSION[SPANSION]
Fujitsu
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WPS512K8X WPS512K8 WPS512K8B-XXXRJI WPS512K8B-XXXR |
DIODE ZENER SINGLE 200mW 3Vz 5mA-Izt 0.0667 10uA-Ir 1 SOT-323 3K/REEL
512Kx8 SRAM 512Kx8SRAM
512Kx8 SRAM 512Kx8的SRAM
115-230V CURR RELAY 512Kx8的SRAM
|
White Microelectronics
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM（江户）
|
Alliance Semiconductor, Corp.
|
| AT45BR3214B AT45BR3214B-C1 |
32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
|
ATMEL Corporation
|
| STK14EC16-UF15 STK14EC16-UF15I STK14EC16-UF15ITR S |
256Kx16 AutoStore nvSRAM
|
Simtek Corporation
|
| STK14EC16 |
256Kx16 AutoStore nvSRAM
|
Simtek
|
